AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet v ds i d (at v gs =10v) 72a r ds(on) (at v gs =10v) < 6.5m w (< 6.2m w* ) symbol v ds v gs 60v AOT2606L/aob2606l aotf2606l drain-source voltage 60 the AOT2606L & aob2606l & aotf2606l uses trench mosfet technology that is uniquely optimized to pro vide the most efficient high frequency switching perform ance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost conve rters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v units parameter absolute maximum ratings t a =25c unless otherwise noted v 2 0 gate-source voltage g d s v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc * surface mount package to263 54 56 38 260 maximum junction-to-case pulsed drain current c continuous drain current g power dissipation a 15 t c =100c power dissipation b p d 57.5 18 -55 to 175 c/w c/w maximum junction-to-ambient a d 1.3 60 4.1 w t a =70c 1.3 t a =25c 2.1 p dsm a t a =25c i dsm 115 36.5 13 72 60 avalanche energy l=0.1mh c a t a =70c continuous drain current 180 i d w t c =25c c thermal characteristics parameter AOT2606L/aob2606l aotf2606l v 2 0 gate-source voltage maximum junction-to-ambient a c/w r q ja 15 60 t c =25c t c =100c mj avalanche current c 10 a units junction and storage temperature range www.freescale.net.cn 1/7 general description features
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.5 3 3.5 v i d(on) 260 a 5.4 6.5 t j =125c 8.5 10.5 g fs 75 s v sd 0.7 1 v i s 72 a c iss 4050 pf c oss 345 pf c rss 16.8 pf r g 0.3 0.65 1.0 w q g (10v) 53 75 nc q g (4.5v) 22 31 nc q gs 17 nc q gd 5 nc t 18 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v i dss m a zero gate voltage drain current m w to220/to220f on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a gate-body leakage current v ds =v gs i d =250 m a v ds =0v, v gs =20v forward transconductance gate resistance v gs =0v, v ds =0v, f=1mhz i s =1a,v gs =0v v ds =5v, i d =20a diode forward voltage maximum body-diode continuous current g input capacitance output capacitance v gs =10v, v ds =30v, i d =20a reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz turn-on delaytime dynamic parameters total gate charge gate source charge gate drain charge switching parameters total gate charge v gs =10v, i d =20a m w to263 r ds(on) static drain-source on-resistance 5.1 6.2 t d(on) 18 ns t r 20 ns t d(off) 33 ns t f 4 ns t rr 26 ns q rr 125 nc turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w turn-off fall time turn-on delaytime i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/7 AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 4.5v 6v 10v vgs=4v 5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 2 4 6 8 10 12 14 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/7 AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =30v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for AOT2606L and aob2606l (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 40 for AOT2606L and aob2606l (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOT2606L and aob2606l (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse area for AOT2606L and aob2606l (note f) r q jc =1.3 c/w www.freescale.net.cn 4/7 AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aotf2606l 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se for aotf2606l (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c r q jc =4.1 c/w pulse width (s) figure 11: normalized maximum transient thermal imp edance for aotf2606l (note f) www.freescale.net.cn 5/7 AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 50 100 150 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating for AOT2606L and aob2606l (note f) 0 20 40 60 80 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de - rating for AOT2606L and 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating for AOT2606L and aob2606l (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w www.freescale.net.cn 6/7 AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 7/7 AOT2606L/aob2606l/aotf2606l 60v n-channel mosfet
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